absolute maximum ratings ( t j = 25c unless otherwise specified ) symbol parameter condition ratings units v drm repetitive peak off-state voltage sine wave, 50 to 60 hz, gate open 800 v i t(rms) r.m.s on-state current t c = 94 c, full sine wave 6.0 a i tsm surge on-state current one cycle, 50hz/60hz, peak, non-repetitive 60/66 a i 2 t i 2 t for fusing tp = 10ms 18 a 2 s p gm peak gate power dissipation t c = 94 c, pulse width 1.0 us 3.0 w p g(av) average gate power dissipation over any 20ms period 0.3 w i gm peak gate current tp = 20us, t j =125c 2.0 a v gm peak gate voltage tp = 20us, t j =125c 10 v v iso isolation breakdown voltage(r.m.s.) a.c. 1 minute 1500 v t j operating junction temperature - 40 ~ 125 c t stg storage temperature - 40 ~ 150 c mass 2.0 g aug, 2003. rev. 0 features repetitive peak off-state voltage : 800v r.m.s on-state current ( i t(rms) = 6 a ) high commutation dv/dt isolation voltage ( v iso = 1500v ac ) general description this device is fully isolated pa ckage suitable for ac switching application, phase control app lication such as fan speed and temperature modulation control, lighting control and static switching relay. this device is approved to comply with applicable require- ments by underwriters laboratories inc. 2.t2 3.gate 1.t1 symbol to-220f 1/6 STF6A80 semiwell semiconductor 1 2 3 bi-directional triode thyristor copyright@semiwell semic onductor co., ltd., all rights reserved. ul : e228720
electrical characteristics symbol items conditions ratings unit min. typ. max. i drm repetitive peak off-state current v d = v drm , single phase, half wave t j = 125 c 1.0 ma v tm peak on-state voltage i t = 8 a, inst. measurement 1.5 v i + gt1 gate trigger current v d = 6 v, r l =10 20 ma i - gt1 20 i - gt3 20 v + gt1 gate trigger voltage v d = 6 v, r l =10 1.5 v v - gt1 1.5 v - gt3 1.5 v gd non-trigger gate voltage t j = 125 c, v d = 1/2 v drm 0.2 v (dv/dt)c critical rate of rise off-state voltage at commutation t j = 125 c, [di/dt]c = -3.0 a/ms, v d =2/3 v drm 5.0 v/ ? i h holding current 10 ma r th(j-c) thermal impedance junction to case 3.8 c/w STF6A80 2/6 notes : 1. pulse width 300us , duty cycle 2%
012345678 90 100 110 120 130 = 90 o = 150 o = 60 o = 30 o = 180 o = 120 o allowable case temperature [ o c] rms on-state current [a] 012345678 0 1 2 3 4 5 6 7 8 9 10 = 90 o = 150 o = 60 o = 30 o = 180 o = 120 o power dissipation [w] rms on-state current [a] -50 0 50 100 150 0.1 1 10 v + gt1 v _ gt1 v gt (t o c) v _ gt3 v gt (25 o c) junction temperature [ o c] 0.5 1.0 1.5 2.0 2.5 3.0 3.5 10 0 10 1 10 2 t j = 25 o c t j = 125 o c on-state current [a] on-state voltage [v] 10 0 10 1 10 2 0 10 20 30 40 50 60 70 80 60hz 50hz surge on-state current [a] time (cycles) 10 1 10 2 10 3 10 -1 10 0 10 1 v gd (0.2v) i gm (2a) 25 p g (av) (0.3w) p gm (3w) v gm (10v) gate voltage [v] gate current [ma] 3/6 fig 1. gate characteristics fig 2. on-state voltage fig 3. on state current vs. maximum power dissipation fig 4. on state current vs. allowable case temperature fig 5. surge on-sta te current rating ( non-repetitive ) fig 6. gate trigger voltage vs. junction temperature 2 360 : conduction angle 2 360 : conduction angle STF6A80
-50 0 50 100 150 0.1 1 10 i _ gt3 i + gt1 i _ gt1 i gt (t o c) i gt (25 o c) junction temperature [ o c] 10 -2 10 -1 10 0 10 1 10 2 1 10 transient thermal impedance [ o c/w] time (sec) 4/6 fig 8. transient thermal impedance fig 7. gate trigger current vs. junction temperature fig 9. gate trigger characteristics test circuit a v 10 ? 6v r g a v 10 ? 6v r g a v 10 ? 6v r g test procedure test procedure test procedure STF6A80
dim. mm inch min. typ. max. min. typ. max. a 10.4 10.6 0.409 0.417 b 6.18 6.44 0.243 0.254 c 9.55 9.81 0.376 0.386 d 13.47 13.73 0.530 0.540 e 6.05 6.15 0.238 0.242 f 1.26 1.36 0.050 0.054 g 3.17 3.43 0.125 0.135 h 1.87 2.13 0.074 0.084 i 2.57 2.83 0.101 0.111 j2.54 0.100 k5.08 0.200 l 2.51 2.62 0.099 0.103 m 1.25 1.55 0.049 0.061 n 0.45 0.63 0.018 0.025 o 0.6 1.0 0.024 0.039 3.7 0.146 1 3.2 0.126 2 1.5 0.059 to-220f package dimension 1. t1 2. t2 3. gate a b c i g l 1 m e f 1 h k n o 2 3 j d 5/6 2 STF6A80
dim. mm inch min. typ. max. min. typ. max. a 10.4 10.6 0.409 0.417 b 6.18 6.44 0.243 0.254 c 9.55 9.81 0.376 0.386 d 8.4 8.66 0.331 0.341 e 6.05 6.15 0.238 0.242 f 1.26 1.36 0.050 0.054 g 3.17 3.43 0.125 0.135 h 1.87 2.13 0.074 0.084 i 2.57 2.83 0.101 0.111 j2.54 0.100 k5.08 0.200 l 2.51 2.62 0.099 0.103 m 1.25 1.55 0.049 0.061 n 0.45 0.63 0.018 0.025 o 0.6 1.0 0.024 0.039 p 5.0 0.197 3.7 0.146 1 3.2 0.126 2 1.5 0.059 to-220f package dimension, forming STF6A80 1. t1 2. t2 3. gate a b c i g l 1 m e f 1 h k n o 2 3 j d 2 p 6/6
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